Product Summary
The 2SB1204 is a PNP epitaxial planar silicon transistor. The applications are relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Parametrics
2SB1204 absolute maximum ratings: (1)collector to base voltage, VCBO: -60V; (2)collector to emitter voltage, VCEO: -50V; (3)emitter to base voltage, VEBO: -6V; (4)collector current, IC: -8A; (5)collector dissipation, PC: 1W; (6)junction temperature, Tj: 150℃; (7)storage temperature, Tstg: -55 to 150℃.
Features
2SB1204 features: (1)low collector-to-emitter saturation voltage; (2)high current and high fT; (3)excellent linearity of hFE; (4)fast switching time; (5)small and slim package.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SB1204 |
Other |
Data Sheet |
Negotiable |
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2SB1204S-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP PNP 8A 50V |
Data Sheet |
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2SB1204S-TL-E |
ON Semiconductor |
Transistors Bipolar (BJT) LOW-SATURATION VOLTAGE |
Data Sheet |
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2SB1204T |
Other |
Data Sheet |
Negotiable |
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2SB1204T-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP PNP 8A 50V |
Data Sheet |
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2SB1204T-TL-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP PNP 8A 50V |
Data Sheet |
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