DS1245Y-120

DIP32, 1024k nonvolatile SRAM, 70 ns, Low-power CMOS, 6.0V

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Price:: US $2.86~3.86 / piece [Get Latest Price]

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	US $2.86~3.86

PartNumber:: DS1245Y-120

Brand:: Dallas Semiconductor - Maxim | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-10

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Part Number:DS1245Y-120
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Product Summary

The DS1245Y-120 Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. The DS1245Y-120 has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source of the DS1245Y-120 is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard.

Parametrics

DS1245Y-120 absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +6.0V; (2)Operating Temperature Range Commercial: 0℃ to +70℃. Industrial: -40℃ to +85℃; (3)Storage Temperature Range EDIP: -40℃ to +85℃; (4)PowerCap: -55℃ to +125℃; (5)Lead Temperature (soldering, 10s): +260℃; (6)Soldering Temperature (reflow, PowerCap): +260℃.

Features

DS1245Y-120 features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times of 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range (DS1245Y); (9)Optional ±5% VCC operating range.