(China (Mainland))
Product Summary
The 2SK317 is a Silicon N Channel MOS FET.
Parametrics
2SK317 absolute maximum ratings: (1)Drain to source voltage, VDSS: 200 V; (2)Gate to source voltage, VGSS: ±20 V; (3)Drain current, ID: 15 A; (4)Drain peak current, ID(pulse): 60 A; (5)Body-drain diode reverse drain current, IDR: 15 A; (6)Avalanche current, IAP: 15 A; (7)Avalanche energy, EAR: 15 mJ; (8)Channel dissipation, Pch: 35 W; (9)Channel temperature, Tch: 150℃; (10) Storage temperature, Tstg: –55 to +150℃.
Features
2SK317 features: (1)Low on-resistance RDS = 90 mΩ typ; (2)High speed switching; (3)4 V gate drive device can be driven from 5 V source.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2SK3174A_1377728 |
Other |
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Data Sheet |
Negotiable |
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2SK3175A_1377716 |
Other |
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Data Sheet |
Negotiable |
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2SK3176(F) |
Toshiba |
MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm |
Data Sheet |
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2SK3176 |
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MOSFET N-CH 200V 30A TO-3PN |
Data Sheet |
Negotiable |
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2SK3177_1377725 |
Other |
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Data Sheet |
Negotiable |
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