Product Summary

The 2N6768 is a power MOSFET.

Parametrics

2N6768 absolute maximum ratings: (1)Gate-Source Voltage:±20V; (2)Pulsed Drain Current:56A; (3)Power Dissipation @ Tcase = 25℃:150W; (4)Linear Derating Factor:1.2W/℃; (5)Single Pulse Avalanche Energy:11.3mJ; (6)Avalanche Current:14A; (7)Repetitive Avalanche Energy:15mJ; (8)Peak Diode Recovery:4.0V/ns; (9)Operating and Storage Temperature Range:-55℃ to +150℃.

Features

2N6768 features: (1)repetitive avalanche ratings; (2)dynamic DV/DT rating; (3)hermeticall sealed; (4)simple drive requirements; (5)ease of paralleling.

Diagrams

2N6768 block diagram

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