(China (Mainland))
Product Summary
The 2N6768 is a power MOSFET.
Parametrics
2N6768 absolute maximum ratings: (1)Gate-Source Voltage:±20V; (2)Pulsed Drain Current:56A; (3)Power Dissipation @ Tcase = 25℃:150W; (4)Linear Derating Factor:1.2W/℃; (5)Single Pulse Avalanche Energy:11.3mJ; (6)Avalanche Current:14A; (7)Repetitive Avalanche Energy:15mJ; (8)Peak Diode Recovery:4.0V/ns; (9)Operating and Storage Temperature Range:-55℃ to +150℃.
Features
2N6768 features: (1)repetitive avalanche ratings; (2)dynamic DV/DT rating; (3)hermeticall sealed; (4)simple drive requirements; (5)ease of paralleling.
Diagrams
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 2N6768 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2N6702 |
Other |
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Data Sheet |
Negotiable |
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2N6704 |
Other |
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Data Sheet |
Negotiable |
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2N6705 |
Other |
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Data Sheet |
Negotiable |
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2N6714 |
Central Semiconductor |
Transistors Bipolar (BJT) Complimentary Power PNP |
Data Sheet |
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2N6714 LEDFREE |
Central Semiconductor |
Transistors Bipolar (BJT) Complimentary Power PNP |
Data Sheet |
Negotiable |
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2N6714STOA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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