(China (Mainland))
Product Summary
The STW8NB100 is an N-channel PowerMESH MOSFET. Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. The applications of the STW8NB100 include high current, high speed switching, switch mode power supply (SMPS), DC-AC converter for welding, equipment and uninterruptable, power supply and motor drive.
Parametrics
STW8NB100 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 1000 V; (2)VDGR, Drain- gate Voltage (RGS = 20 kW): 1000 V; (3)VGS, Gate-source Voltage: ±30 V; (4)ID, Drain Current (continuous) at Tc = 25℃: 8 A; (5)ID, Drain Current (continuous) at Tc = 100℃: 5 A; (6)IDM(·), Drain Current (pulsed): 32 A; (7)Ptot, Total Dissipation at Tc = 25℃: 190 W; (8)Derating Factor: 1.52 W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 4 V/ns; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max. Operating Junction Temperature: 150℃.
Features
STW8NB100 features: (1)Typical RDS(on) = 1.2 W; (2)Extremely high dv/dt capability; (3)±30V gate to source voltage rating; (4)100% avalanche tested; (5)Low intrinsic capacitance; (6)Gate charge minimized; (7)Reduced voltage spread.
Diagrams
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STMicroelectronics |
MOSFET RO 511-STW11NK100Z |
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