(China (Mainland))
Product Summary
The FQPF6N90C is an N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF6N90C is well suited for high efficiency switch mode power supplies.
Parametrics
FQPF6N90C absolute maximum ratings: (1)VDSS, Drain-Source Voltage 900 V; (2)ID, Drain Current - Continuous (TC = 25℃): 6A; - Continuous (TC = 100℃): 3.8A; (3)IDM, Drain Current - Pulsed: 24 A; (4)VGSS, Gate-Source Voltage: ±30 V; (5)EAS, Single Pulsed Avalanche Energy: 650 mJ; (6)IAR, Avalanche Current: 6 A; (7)EAR, Repetitive Avalanche Energy: 16.7 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 56 W; Derate above 25℃: 0.48 W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.
Features
FQPF6N90C features: (1)6A, 900V, RDS(on) = 2.3Ω@VGS = 10 V; (2)Low gate charge (typical 30 nC); (3)Low Crss (typical 11 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF6N90C |
Fairchild Semiconductor |
MOSFET 900V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQPF6N90CT |
Fairchild Semiconductor |
MOSFET 900V N-Chan Advance Q-FET C-Series |
Data Sheet |
Negotiable |
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