Product Summary

The IRFI640G is a third generation Power MOSFET provided the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

Parametrics

IRFI640G absolute maximum ratings: (1)Drain-Source Voltage, VDS: 200V; (2)Gate-Source Voltage, VGS: ± 20V; (3)Continuous Drain Current, VGS at 10 V TC = 25℃, ID: 9.8A; TC = 100℃: 6.2 A; (4)Pulsed Drain Current, IDM: 39A; (5)Linear Derating Factor: 0.32 W/℃; (6)Single Pulse Avalanche Energy, EAS: 430 mJ; (7)Repetitive Avalanche Current, IAR: 9.8 A; (8)Repetitive Avalanche Energy, EAR: 4.0 mJ; (9)Maximum Power Dissipation TC = 25℃, PD: 40 W; (10)Peak Diode Recovery dV/dt, dV/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to + 150℃; (12)Soldering Recommendations (Peak Temperature) for 10 s: 300d; (13)Mounting Torque 6-32 or M3 screw, 10 lbf · in: 1.1 N · m.

Features

IRFI640G features: (1)Isolated Package; (2)High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz); (3)Sink to Lead Creepage Distance = 4.8 mm; (4)Dynamic dV/dt Rating; (5)Low Thermal Resistance; (6)Lead (Pb)-free Available.

Diagrams

IRFI640G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFI640G
IRFI640G
Vishay/Siliconix
MOSFET N-Chan 200V 9.8 Amp
Data Sheet
0-725: $2.57
725-1000: $2.47
1000-2000: $2.41
IRFI640G, SiHFI640G
IRFI640G, SiHFI640G
Other

Data Sheet
Negotiable 
IRFI640GPBF
IRFI640GPBF
Vishay/Siliconix
MOSFET N-Chan 200V 9.8 Amp
Data Sheet
0-1: $1.12
1-10: $0.89
10-100: $0.80
100-250: $0.71