Product Summary

The MRF157 is a power field effect trabsistor of N-channel enhancement mode. It is designed primarily for linear large–signal output stages to 80 MHz. The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during the fabrication of the TMOS) FET results in a junction capacitance from drain–to–source (Cds).

Parametrics

Absolute maximum ratings:(1)Drain–Source Voltage, VDSS: 125Vdc; (2)Drain–Gate Voltage, VDGO: 125Vdc; (3)Gate–Source Voltage, VGS: ±40Vdc; (4)Drain Current — Continuous, ID: 60Adc; (5)Total Device Dissipation at TC = 25℃, PD: 1350Watts; (6)Total Device Dissipation at Derate above 25℃, PD: 7.7W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃; (8)Operating Junction Temperature, TJ: 200℃.

Features

Features: (1)Specified 50 Volts, 30 MHz; (2)Output Power = 600 Watts; (3)Power Gain = 21 dB (Typ); (4)Efficiency = 45% (Typ).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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MRF157
MRF157

M/A-COM Technology Solutions

Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB

Data Sheet

0-1: $309.00
1-10: $295.20
MRF1570FNT1
MRF1570FNT1

Freescale Semiconductor

Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT

Data Sheet

0-386: $12.83
386-500: $12.83
MRF1570FT1
MRF1570FT1

Other


Data Sheet

Negotiable 
MRF1570NT1
MRF1570NT1

Freescale Semiconductor

Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED

Data Sheet

0-271: $18.30
271-500: $13.19
MRF1570T1
MRF1570T1

Other


Data Sheet

Negotiable