(China (Mainland))
Product Summary
The MRF281Z is a RF power field effect transistor. It is a N Channel Enhancement Mode Lateral MOSFET, RF Sub–Micron MOSFET Line device. It is designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. The MRF281Z is characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
Parametrics
MRF281Z absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 65Vdc; (2)Gate–Source Voltage, VGS: ±20Vdc; (3)Total Device Dissipation, @ TC = 25℃, PD: 20Watts; (4)Total Device Dissipation, Derate above 25℃, PD: 0.115W/℃; (5)Storage Temperature Range, Tstg: –65 to +150℃; (6)Operating Junction Temperature, TJ: 200℃.
Features
MRF281Z features: (1)Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts; (2)Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large–Signal Impedance Parameters; (5)S–Parameter Characterization at High Bias Levels; (6)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 MRF281ZR1 |
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IC MOSFET RF N-CHAN NI-200Z |
Data Sheet |
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MRF20030 |
Other |
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Data Sheet |
Negotiable |
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MRF20030R |
Other |
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Data Sheet |
Negotiable |
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MRF20060 |
Other |
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Data Sheet |
Negotiable |
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MRF20060_1248487 |
Other |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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