(China (Mainland))
Product Summary
The MRF650 is a RF Line NPN silicon RF power transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.
Parametrics
MRF650 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 16.5 Vdc; (2)Collector–Emitter Voltage, VCES: 38 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current — Continuous, IC: 12 Adc; (5)Total Device Dissipation @ TC = 25℃, PD: 135 Watts; Derate above 25℃, PD: 0.77 W/℃; (6)Storage Temperature Range, Tstg: –65 to +150℃; (7)Operating Junction Temperature, TJ: 200℃.
Features
MRF650 features: (1)Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics: Output Power = 50 Watts; Minimum Gain = 5.2 dB @ 440, 470 MHz; Efficiency = 55% @ 440, 470 MHz; IRL = 10 dB; (2)Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz; (3)Built–In Matching Network for Broadband Operation; (4)Triple Ion Implanted for More Consistent Characteristics; (5)Implanted Emitter Ballast Resistors; (6)Silicon Nitride Passivated; (7)100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive; (8)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF650 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF650 |
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RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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